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Preliminary Technical Information
TrenchHV TM
Power MOSFET
N-Channel Enhancement Mode
IXTH130N20T
V DSS
I D25
R DS(on)
= 200V
= 130A
≤ 16m Ω
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247
V DSS
V DGR
V GSM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1M Ω
Transient
200
200
± 30
V
V
V
I D25
I LRMS
I DM
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
130
75
320
A
A
A
G
D
S
(TAB)
I A
E AS
dv/dt
P d
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS, T J ≤ 175 ° C
T C = 25 ° C
4
1.0
10
830
A
J
V/ns
W
G = Gate
S = Source
D = Drain
TAB = Drain
T J
T JM
T stg
-55 ... +175
175
-55 ... +175
° C
° C
° C
T L
T SOLD
M d
Weight
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
300
260
1.13/10
6
° C
° C
Nm/lb.in
g
Features
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High Power density
Applications
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0V, I D = 250 μ A
V DS = V GS , I D = 1mA
V GS = ± 20V, V DS = 0V
V DS = V DSS
V GS = 0V T J = 150 ° C
V GS = 10V, I D = 0.5 ? I D25 , Notes 1
200
2.5
5.0
± 200
25
500
16
V
V
nA
μ A
μ A
m Ω
DC-DC converters
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor control
High speed power switching
applications
DC choppers
Battery chargers
? 2007 IXYS CORPORATION, All rights reserved
DS99846(06/07)
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相关代理商/技术参数
IXTH13N110 功能描述:MOSFET 13 Amps 1100V 0.92 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH13N65 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH13N80 功能描述:MOSFET 13 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTH13N90 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH13P15 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH13P20 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH13P25 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 13A I(D) | TO-218VAR
IXTH140P05T 功能描述:MOSFET -140 Amps -50V 0.008 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube